Wide-Bandgap Materials for High-Intensity Wireless Laser Power Transmission in the Solar System

High-Intensity Wireless Laser Power Transmission (WLPT) is emerging as a ground-breaking technology with a wide range of promising applications, such as space exploration missions. While conventional photovoltaic devices primarily rely on GaAs-based converters, they present significant efficiency losses under high-intensity scenarios. This work explores the potential of novel wide-bandgap semiconductors, specifically SiCs and InGaN, to outperform traditional technologies. We conduct a comprehensive theoretical analysis of these materials as laser power converters across planetary atmospheres of the Solar System. Results indicate that InGaN and SiC-based converters could achieve efficiencies exceeding 75% in high potential candidates, with very tenuous atmospheres, such as the Moon or Mercury. For planets and satellites with Earth-like atmospheres, the efficiencies of these materials could be beyond 50%. In all cases, the novel, wide bandgap materials seem to outperform GaAs. These results highlight the suitability of wide-bandgap materials for WLPT paving the way for reliable and continuous in future and space exploration missions.