Enhancement of Indistinguishable-Photon Emission from a GaAs Quantum Dot via Charge-Noise Suppression

The generation of indistinguishable single photons is a fundamental requirement for photonic quantum technologies. However, spectral fluctuations, often induced by charge noise in epitaxial quantum dots (QDs), lead to exciton dephasing, thereby limiting their practical usage in quantum applications. We present a straightforward approach to mitigate charge noise-induced decoherence in droplet-etched GaAs QDs embedded in an n-i-p diode structure and integrated deterministically into an electrically contacted circular Bragg grating resonator for emission enhancement. The quantum device allows for the stabilization of the charge environment by applying an external electrical field while producing a photon extraction efficiency of (37±2)%. Hong-Ou-Mandel two-photon interference measurements reveal a strong dependence of the exciton dephasing time and interference visibility on the applied bias, in excellent agreement with our theoretical predictions. Notably, the reduction in visibility from a maximum, charge stabilized corrected value of 97% at the optimum bias point follows an inverse square dependence (∝1/I^{2}) with increasing diode current (I) in the forward direction. Under a quasi-resonant excitation scheme, we achieve a maximum exciton dephasing time (T_{2}^{*}) of approximately (6.8±0.5) ns, reaching nearly the Fourier limit (T_{2}=2T_{1}) without the need for complex echo schemes like Ramsey or Carr-Purcell-Meiboom-Gill sequences. These findings are consistent with theoretical predictions from rate equation modeling and quantum optical analysis, as well as voltage-dependent linewidth measurements, demonstrating optimized electrical control of exciton dephasing.