β-Ga2O3 diodes with ultra-high surge current enabled by Ag/AMB-AlN flip-chip packaging

Owing to superior breakdown voltage and exceptional robustness, the β -Ga 2 O 3 power device has emerged as a pivotal research frontier in power electronics. Although advanced packaging strategies, including nano-silver paste sintering, alumina direct bond copper (DBC) substrates, and flip-chip structures, have been adopted to mitigate β -Ga 2 O 3 ’s intrinsic low thermal conductivity. However, a further reduction in the thermal resistance while maintaining high reliability remains a challenge. This study introduces a novel packaging methodology that synergistically integrates nano-silver films with aluminum nitride active metal brazing (AMB-AlN) substrates, achieving an ultra-low junction-to-case thermal resistance. Comprehensive reliability assessments were conducted on β -Ga 2 O 3 Schottky barrier diodes (SBDs) and p-NiO/ β -Ga 2 O 3 hetero-junction diodes (HJDs), encompassing high-temperature storage test, reverse recovery analysis, and surge current characterization. The SBDs and HJDs exhibit surge current densities of ∼0.88 kA/cm 2 and ∼0.78 kA/cm 2 , respectively, ranking among the highest reported levels for β -Ga 2 O 3 power devices, which represents a significant advancement in device performance benchmarks. These advancements provide critical insights into packaging design for high-reliability ultra-wide bandgap semiconductor systems.