Wafer-scale bubble-free Si-on-SiC fabricated by plasma activated bonding technology

• Fabrication of 6-inch bubble-free and stress-free Si-on-SiC (SOSiC) wafers. • Improved RF performance: higher effective resistivity (ρ eff ≥ 10 3 Ω·cm, 100 MHz-11 GHz) and lower attenuation (α ≤ 0.20 dB/mm, 100 MHz-13 GHz) than HR-SOI. • Highly enhance thermal conductivity: 40.9 MW/m 2 K. The 6-inch bubble-free, stressless Si-on-SiC (SOSiC) wafer was fabricated for improving heat dissipation and radio frequency (RF) performance of RF front-end modules applied in 6G technology. Coplanar waveguide (CPW) devices fabricated on SOSiC wafer show higher effective resistivity (ρ eff ≥ 10 3 Ω·cm, 100 MHz-11 GHz) and lower attenuation coefficients (α ≤ 0.20 dB/mm, 100 MHz-13 GHz) than those on HR-SOI. The effective thermal conductivity (TC eff ) of SOSiC wafers with BOX thicknesses of 10 nm, 16 nm, and 22 nm is 58.4 MW/m 2 ·K, 50.2 MW/m 2 ·K, and 40.9 MW/m 2 ·K, respectively. The newly fabricated SOSiC wafer has the potential for 6G front-end applications.