InGaAs membrane plasmonic photodetector with Ni-InGaAs alloy integrated on Si waveguide

We propose III-V/Si hybrid plasmonic waveguide photodetector incorporating an InGaAs membrane. We confirmed that Ni-InGaAs alloy functions effectively as an electrode for a plasmonic waveguide. Utilizing Ni-InGaAs alloy enabled the integration of plasmonic waveguide photodetectors into the Si photonics platform through a simplified fabrication process. We achieved a responsivity of 0.13 A/W at 1 V with a dark current of 400 nA and confirmed a 32.1 Gbit/s clear eye diagram, demonstrating the potential for high speed InGaAs plasmonic photodetector in Si photonics.