Simulation of a Plasma Microwave Resonator with a Combination of TE and TM Modes for Growing an Alloying Delta Layer in the Diamond

The geometry of a plasma microwave resonator for CVD diamond growth technology was calculated using the Comsol package, which provides the growth of both an undoped diamond in the TM mode and of the doping δ layer in the TE mode. It is shown that sufficiently homogeneous plasma over the diamond growth surface (substrate) can be maintained in the TE mode at a low gas pressure that is optimal for growing the δ layer. The main trends predicted by the simple calculation model developed in the first part of the present communication, in particular, sufficiently high electron temperature and plasma density when using the low-pressure TE mode, are confirmed.