Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature

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Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-09-22
Primary Topic
Copper Interconnects and Reliability
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article
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article

Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature

T. Tillocher, G. Cunge, P. Lefaucheux, M. Adjabi et al.
SPIRE - Sciences Po Institutional REpository
Copper Interconnects and Reliability
article

Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature

T. Tillocher, G. Cunge, P. Lefaucheux, M. Adjabi, L. Becerra, E. Despiau-Pujo, S. Iseni, M. Kogelschatz, R. Dussart, J. Nos
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Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 49%
Copper Interconnects and Reliability
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Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature — T. Tillocher, G. Cunge, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS