UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF4 plasmas

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Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-10-01
Primary Topic
Plasma Diagnostics and Applications
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article
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article

UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF4 plasmas

T. Tillocher, G. Cunge, P. Lefaucheux, E. Despiau-Pujo et al.
SPIRE - Sciences Po Institutional REpository
Plasma Diagnostics and Applications
article

UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF4 plasmas

T. Tillocher, G. Cunge, P. Lefaucheux, E. Despiau-Pujo, S. Iseni, M. Kogelschatz, R. Dussart, J. Nos
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Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 39%
Plasma Diagnostics and Applications
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UV absorption spectroscopy to study the role of CF radicals during cryogenic etching of Si in CF4 plasmas — T. Tillocher, G. Cunge, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS