Impact of substrate curvature on grazing-incidence small-angle X-ray scattering signal: theory and example of Ag thin-film growth

Grazing-incidence small-angle X-ray scattering (GISAXS) is a technique of choice for providing information about the morphology of nano- and micro-structures at surfaces and interfaces, also in real time. The geometry of the sample, in particular its curvature, has an impact on the observed X-ray scattering signal. There are a multitude of systems with sophisticated geometries (including curvature), ranging from electronic devices on flexible substrates to biological membranes, for which GISAXS could provide valuable information. Therefore, in this work the effect of the sample geometry on the GISAXS signal is addressed. More specifically the influence of the substrate curvature and extent along the X-ray beam is considered. The analytical expressions accounting for the effects of those two geometrical parameters are provided, and the way to include them in the analysis of GISAXS patterns is described. The calculations reveal that no corrections are needed for small samples (length over distance to the detector ratio smaller than 1%) and radius of curvature |<i>R</i>| > 50 m. These results allow for a combination of GISAXS with substrate curvature measurements. The latter technique is a non-destructive <i>in situ</i> and real-time method providing information about the intrinsic stress in a thin film during its growth. Morphological information from GISAXS is supposed to complement this stress information. Herein this methodology is applied to the growth of Ag thin films deposited by magnetron sputtering with N<sub>2</sub> plasma additive. The analysis of the GISAXS pattern obtained from the sample, which bends during the deposition, provided morphological parameters of the growing film. This methodology can be useful for understanding of the mechanisms at the nanoscale leading to the observed stress state. The ability to perform GISAXS on curved substrates enables its application to more complex systems.

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Journal
Journal of Applied Crystallography
Published
2026-01-05
DOI
https://doi.org/10.1107/s1600576725010726
Primary Topic
X-ray Spectroscopy and Fluorescence Analysis
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article
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article

Impact of substrate curvature on grazing-incidence small-angle X-ray scattering signal: theory and example of Ag thin-film growth

David Babonneau, Michał Kamiński, G. Abadias, Andrea Resta et al.
Journal of Applied Crystallography
X-ray Spectroscopy and Fluorescence Analysis
article

Impact of substrate curvature on grazing-incidence small-angle X-ray scattering signal: theory and example of Ag thin-film growth

David Babonneau, Michał Kamiński, G. Abadias, Andrea Resta, Y. Garreau, Alessandro Coati, B. Krause, Alina Vlad, Karan Solanki, Anny Michel
article en

Abstract

Grazing-incidence small-angle X-ray scattering (GISAXS) is a technique of choice for providing information about the morphology of nano- and micro-structures at surfaces and interfaces, also in real time. The geometry of the sample, in particular its curvature, has an impact on the observed X-ray scattering signal. There are a multitude of systems with sophisticated geometries (including curvature), ranging from electronic devices on flexible substrates to biological membranes, for which GISAXS could provide valuable information. Therefore, in this work the effect of the sample geometry on the GISAXS signal is addressed. More specifically the influence of the substrate curvature and extent along the X-ray beam is considered. The analytical expressions accounting for the effects of those two geometrical parameters are provided, and the way to include them in the analysis of GISAXS patterns is described. The calculations reveal that no corrections are needed for small samples (length over distance to the detector ratio smaller than 1%) and radius of curvature |<i>R</i>| > 50 m. These results allow for a combination of GISAXS with substrate curvature measurements. The latter technique is a non-destructive <i>in situ</i> and real-time method providing information about the intrinsic stress in a thin film during its growth. Morphological information from GISAXS is supposed to complement this stress information. Herein this methodology is applied to the growth of Ag thin films deposited by magnetron sputtering with N<sub>2</sub> plasma additive. The analysis of the GISAXS pattern obtained from the sample, which bends during the deposition, provided morphological parameters of the growing film. This methodology can be useful for understanding of the mechanisms at the nanoscale leading to the observed stress state. The ability to perform GISAXS on curved substrates enables its application to more complex systems.

Journal of Applied CrystallographyVol. 59(1)
Karlsruhe Institute of Technology (DE), Centre National de la Recherche Scientifique (FR), École Nationale Supérieure de Mécanique et d'Aérotechnique (FR), Université Paris Cité (FR), Synchrotron soleil (FR), Université de Poitiers (FR), Laboratoire Matériaux et Phénomènes Quantiques (FR)
Openalex Percentile: Top 87%
X-ray Spectroscopy and Fluorescence Analysis
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