Creation of High-Density Néel Skyrmions by Interfacial-Proximity Engineering

Two-dimensional ferromagnets are promising for compact spintronic devices. However, their centrosymmetric structure inherently suppresses the Dzyaloshinskii-Moriya interaction (DMI), hindering the stabilization of chiral spin texture. Here, a tunable DMI induced by interface symmetry breaking in Fe<sub>3</sub>GeTe<sub>2</sub>/MoS<sub>2</sub> vdW heterostructures is reported. We find that the interfacial DMI stabilizes Néel-type skyrmions in Fe<sub>3</sub>GeTe<sub>2</sub>/MoS<sub>2</sub> heterostructures under zero magnetic field, with nucleation observed at 64 Oe and annihilation at 800 Oe via Lorentz transmission electron microscopy (LTEM). Skyrmion density peaks (~0.57 skyrmions/μm<sup>2</sup>) at a Fe<sub>3</sub>GeTe<sub>2</sub> thickness of ~30 nm and decays beyond ~60 nm, indicating a finite penetration depth of the proximity effect. Such modulated DMI enables a stabilized nucleation of Néel type skyrmions, allowing for precise control over their density, revealed by Lorentz transmission electron microscopy. Thickness-dependent measurements confirm the interfacial origin of this stabilization. Skyrmion density reaches peak in thin Fe<sub>3</sub>GeTe<sub>2</sub> layers and decays beyond ~60 nm, defining the finite penetration depth of the proximity effect. Micromagnetic simulations reproduce the field-dependent evolution of skyrmions, showing a strong correlation to interfacial DMI. First-principles calculations attribute this DMI to asymmetric charge redistribution and spin-orbit coupling at the heterointerface. This work establishes interface engineering as a universal strategy for stabilizing skyrmions in centrosymmetric vdW ferromagnets, offering a thickness-tunable platform for next-generation two-dimensional spintronic devices.

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Journal
Materials
Published
2026-01-14
DOI
https://doi.org/10.3390/ma19020340
Primary Topic
2D Materials and Applications
Type
article
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article

Creation of High-Density Néel Skyrmions by Interfacial-Proximity Engineering

Meichen Wen, Tingjia Zhang, Jiajun Qin, Wuyang Tan et al.
Materials
2D Materials and Applications
article

Creation of High-Density Néel Skyrmions by Interfacial-Proximity Engineering

Meichen Wen, Tingjia Zhang, Jiajun Qin, Wuyang Tan, Liang Jia, Chendi Yang, Xiao Ming Yang, Wei Li, Junye Pan, Ke Pei, Xiaowei Lv
article en

Abstract

Two-dimensional ferromagnets are promising for compact spintronic devices. However, their centrosymmetric structure inherently suppresses the Dzyaloshinskii-Moriya interaction (DMI), hindering the stabilization of chiral spin texture. Here, a tunable DMI induced by interface symmetry breaking in Fe<sub>3</sub>GeTe<sub>2</sub>/MoS<sub>2</sub> vdW heterostructures is reported. We find that the interfacial DMI stabilizes Néel-type skyrmions in Fe<sub>3</sub>GeTe<sub>2</sub>/MoS<sub>2</sub> heterostructures under zero magnetic field, with nucleation observed at 64 Oe and annihilation at 800 Oe via Lorentz transmission electron microscopy (LTEM). Skyrmion density peaks (~0.57 skyrmions/μm<sup>2</sup>) at a Fe<sub>3</sub>GeTe<sub>2</sub> thickness of ~30 nm and decays beyond ~60 nm, indicating a finite penetration depth of the proximity effect. Such modulated DMI enables a stabilized nucleation of Néel type skyrmions, allowing for precise control over their density, revealed by Lorentz transmission electron microscopy. Thickness-dependent measurements confirm the interfacial origin of this stabilization. Skyrmion density reaches peak in thin Fe<sub>3</sub>GeTe<sub>2</sub> layers and decays beyond ~60 nm, defining the finite penetration depth of the proximity effect. Micromagnetic simulations reproduce the field-dependent evolution of skyrmions, showing a strong correlation to interfacial DMI. First-principles calculations attribute this DMI to asymmetric charge redistribution and spin-orbit coupling at the heterointerface. This work establishes interface engineering as a universal strategy for stabilizing skyrmions in centrosymmetric vdW ferromagnets, offering a thickness-tunable platform for next-generation two-dimensional spintronic devices.

MaterialsVol. 19(2)
Shanghai University (CN), University of Shanghai for Science and Technology (CN), Donghua University (CN), Fudan University (CN), Shanghai Fudan Microelectronics (China) (CN), Collaborative Innovation Center of Chemistry for Energy Materials (CN)
Openalex Percentile: Top 87%
2D Materials and Applications
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