III-nitride semiconductor nanowires: recent advances in molecular beam epitaxy and optoelectronic devices

Semiconductor nanowires have continued to be an important material format for both fundamental science and device research. Recent years have witnessed a fantastic progress on semiconductor nanowires across different material systems, such as II-VI, III-V, III-nitrides, and so on. In this review paper, I would like to focus on some of the recent developments in III-nitride nanowires and their device applications. A specific III-nitride nanowire synthesis technique, molecular beam epitaxy (MBE), which is a highly controllable, scalable, and industrial production compatible material synthesis technique, is focused. Recent understanding about the MBE growth of III-nitride nanowires, including low temperature selective area epitaxy and chamber configuration dependent properties, is discussed. Moreover, recent advances on III-nitride nanowire light-emitting and photodetection devices are discussed. In addition, emerging studies on scandium (Sc) incorporated III-nitride nanowires and devices are discussed. The intention of this review paper is to complement recent reviews in the field of III-nitride nanowire research and provide readers some future perspectives on this intriguing semiconductor material system.