Floating zone growth of high-purity MgO substrate single crystals

MgO single crystals with diameters between 3.5 and 5 mm and lengths up to 40 mm were grown by the optical floating zone technique (OFZ). Despite challenging material properties such as the high melting point of 2825°C, very high evaporation rate and perfect {100} cleaving characteristics, crack-free crystals were grown at high growth rates exceeding 40 mm h<sup>-1</sup> and at high thermal gradients. Chemical investigations revealed that the OFZ technique is suitable for the preparation of substrate crystals with a purity of 5N to facilitate the development of novel demonstrator devices based on epitaxially grown thin films. The achieved purity level is improved by more than one order of magnitude if compared to commercial MgO substrate single crystals graded as high purity.

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Publication Details

Journal
Acta Crystallographica Section B Structural Science Crystal Engineering and Materials
Published
2026-01-14
DOI
https://doi.org/10.1107/s2052520625010893
Primary Topic
Magnesium Oxide Properties and Applications
Type
article
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article

Floating zone growth of high-purity MgO substrate single crystals

Christo Guguschev, Knut Peters, Andrea Dittmar, Aakash Pushp et al.
Acta Crystallographica Section B Structural Science Crystal Engineering and Materials
Magnesium Oxide Properties and Applications
article

Floating zone growth of high-purity MgO substrate single crystals

Christo Guguschev, Knut Peters, Andrea Dittmar, Aakash Pushp, D. Klimm, Kaspars Dadzis, Thomas Schroeder, Michael Schulze
article en

Abstract

MgO single crystals with diameters between 3.5 and 5 mm and lengths up to 40 mm were grown by the optical floating zone technique (OFZ). Despite challenging material properties such as the high melting point of 2825°C, very high evaporation rate and perfect {100} cleaving characteristics, crack-free crystals were grown at high growth rates exceeding 40 mm h<sup>-1</sup> and at high thermal gradients. Chemical investigations revealed that the OFZ technique is suitable for the preparation of substrate crystals with a purity of 5N to facilitate the development of novel demonstrator devices based on epitaxially grown thin films. The achieved purity level is improved by more than one order of magnitude if compared to commercial MgO substrate single crystals graded as high purity.

Acta Crystallographica Section B Structural Science Crystal Engineering and MaterialsVol. 82(1)
IBM Research - Almaden (US), Micro Resist Technology (Germany) (DE), Leibniz Institute for Crystal Growth (DE)
Openalex Percentile: Top 88%
Magnesium Oxide Properties and Applications
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