Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications

The continued downscaling of transistors has exacerbated aging mechanisms such as bias temperature instability (BTI) and hot-carrier injection (HCI), posing significant reliability challenges for nanoscale integrated circuits. These effects are particularly critical to flip-flops operating at low supply voltages, which are essential for ultra-low-power applications including the Internet of Things (IoT) and biomedical implants. In this work, we address the aging issue in low-voltage Split-Controlled Flip-Flops (SCFFs) by proposing a novel transistor-level mitigation technique specifically tailored to this architecture within a domestic 14 nm process library. Through a detailed analysis of aging-critical transistors, three targeted enhancement strategies are introduced. Simulation results demonstrate that the improved SCFF achieves more than a 60% reduction in PMOS threshold voltage degradation and a 40% reduction in timing delay, while maintaining robust operation at a supply voltage as low as 0.4 V. These results highlight the effectiveness of the proposed approach in mitigating aging effects and enhancing reliability under low-voltage operation.

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Publication Details

Journal
Micromachines
Published
2026-01-14
DOI
https://doi.org/10.3390/mi17010111
Primary Topic
Semiconductor materials and devices
Type
article
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article

Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications

Hao Zhu, La Chen, Jingjing Tan, Qingqing Sun et al.
Micromachines
Semiconductor materials and devices
article

Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications

Hao Zhu, La Chen, Jingjing Tan, Qingqing Sun, Yuexin Zhao
article en

Abstract

The continued downscaling of transistors has exacerbated aging mechanisms such as bias temperature instability (BTI) and hot-carrier injection (HCI), posing significant reliability challenges for nanoscale integrated circuits. These effects are particularly critical to flip-flops operating at low supply voltages, which are essential for ultra-low-power applications including the Internet of Things (IoT) and biomedical implants. In this work, we address the aging issue in low-voltage Split-Controlled Flip-Flops (SCFFs) by proposing a novel transistor-level mitigation technique specifically tailored to this architecture within a domestic 14 nm process library. Through a detailed analysis of aging-critical transistors, three targeted enhancement strategies are introduced. Simulation results demonstrate that the improved SCFF achieves more than a 60% reduction in PMOS threshold voltage degradation and a 40% reduction in timing delay, while maintaining robust operation at a supply voltage as low as 0.4 V. These results highlight the effectiveness of the proposed approach in mitigating aging effects and enhancing reliability under low-voltage operation.

MicromachinesVol. 17(1)
Shanghai Innovative Research Center of Traditional Chinese Medicine (CN), Shanghai Fudan Microelectronics (China) (CN)
Openalex Percentile: Top 88%
Semiconductor materials and devices
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Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications — Hao Zhu, La Chen, et al. · Micromachines (2026) | TGRS Research Map | TGRS