Device and Circuit Co-Optimization of Split-Controlled Flip-Flops Against Aging Towards Low-Voltage Applications
The continued downscaling of transistors has exacerbated aging mechanisms such as bias temperature instability (BTI) and hot-carrier injection (HCI), posing significant reliability challenges for nanoscale integrated circuits. These effects are particularly critical to flip-flops operating at low supply voltages, which are essential for ultra-low-power applications including the Internet of Things (IoT) and biomedical implants. In this work, we address the aging issue in low-voltage Split-Controlled Flip-Flops (SCFFs) by proposing a novel transistor-level mitigation technique specifically tailored to this architecture within a domestic 14 nm process library. Through a detailed analysis of aging-critical transistors, three targeted enhancement strategies are introduced. Simulation results demonstrate that the improved SCFF achieves more than a 60% reduction in PMOS threshold voltage degradation and a 40% reduction in timing delay, while maintaining robust operation at a supply voltage as low as 0.4 V. These results highlight the effectiveness of the proposed approach in mitigating aging effects and enhancing reliability under low-voltage operation.
Authors
- Hao Zhu (ORCID: https://orcid.org/0000-0003-3890-6871)
- La Chen
- Jingjing Tan
- Qingqing Sun
- Yuexin Zhao
Institutions
- Shanghai Innovative Research Center of Traditional Chinese Medicine (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Journal
- Micromachines
- Published
- 2026-01-14
- DOI
- https://doi.org/10.3390/mi17010111
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00