Ternary Memory Cells Based on Perforated Magnetic Films

This paper studies ferromagnetic films with strong uniaxial easy-plane anisotropy and proves that paired nanoscale perforations in such films can be used as memory cells for recording and storing data in a ternary number system. The problem of reading the state of cells of this type is examined, and an approach to its solution is proposed, which consists of measuring the system’s response to a picosecond pulse of an external magnetic field. The parameters of the system at which the magnitude of this response is maximal are obtained, and estimates of this value are made using both analytical and numerical methods.