A robust anti-thermal quenching red phosphors: Cs <sub>2</sub> ZrCl <sub>6</sub> :Sb <sup>3+</sup>

Most of phosphors undergo thermal quenching (TQ) at high temperature, due to thermal-activated non-radiative transitions. TQ effect led to significant reduced luminous efficiency of phosphors at high operation temperature, hindering their application in high power phosphor-converted white light-emitting diodes (WLED). Here, we report a zero-dimensional metal halide perovskite: Cs<sub>2</sub>ZrCl<sub>6</sub>:Sb<sup>3+</sup>, exhibiting robust anti-TQ red emission up to 500 K, comparable to the mainstream anti-TQ phosphors (e.g. K<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup>). The hetero-valent doping of Sb<sup>3+</sup> induces structure defects of host and thus compensate the non-radiative emission loss through thermal accelerated energy transfer from defects to emitter at high temperature. We assembled the red anti-TQ phosphor into a WLED device, achieving stable output light intensity and chromaticity up to 2000 mA.

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Publication Details

Journal
Nano Research
Published
2026-01-14
DOI
https://doi.org/10.26599/nr.2026.94908432
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.00

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article

A robust anti-thermal quenching red phosphors: Cs 2 ZrCl 6 :Sb 3+

Siyu LU, Baowei Zhang, Jingtao Jia
Nano Research
Luminescence Properties of Advanced Materials
article

A robust anti-thermal quenching red phosphors: Cs 2 ZrCl 6 :Sb 3+

Siyu LU, Baowei Zhang, Jingtao Jia
article en

Abstract

Most of phosphors undergo thermal quenching (TQ) at high temperature, due to thermal-activated non-radiative transitions. TQ effect led to significant reduced luminous efficiency of phosphors at high operation temperature, hindering their application in high power phosphor-converted white light-emitting diodes (WLED). Here, we report a zero-dimensional metal halide perovskite: Cs<sub>2</sub>ZrCl<sub>6</sub>:Sb<sup>3+</sup>, exhibiting robust anti-TQ red emission up to 500 K, comparable to the mainstream anti-TQ phosphors (e.g. K<sub>2</sub>SiF<sub>6</sub>:Mn<sup>4+</sup>). The hetero-valent doping of Sb<sup>3+</sup> induces structure defects of host and thus compensate the non-radiative emission loss through thermal accelerated energy transfer from defects to emitter at high temperature. We assembled the red anti-TQ phosphor into a WLED device, achieving stable output light intensity and chromaticity up to 2000 mA.

Nano ResearchVol. 19(3)
National Natural Science Foundation of China, China Postdoctoral Science Foundation, Zhengzhou University
Affordable and clean energy
Openalex Percentile: Top 89%
Luminescence Properties of Advanced Materials
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