Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application

Due to the Von Neumann bottleneck of traditional CMOS computing, there is an urgent need to develop in-memory logic devices with low power consumption. In this work, we demonstrate ferroelectric diode devices based on the TiN/Hf_0.5Zr_0.5O₂/HfO₂/TiN structure, implementing 16 Boolean logic operations through single-step or multi-step (2-3 steps) cascade and achieving attojoule-level one-bit full-adder computation. The TiN/Hf_0.5Zr_0.5O₂/HfO₂/TiN ferroelectric diode exhibits non-destructive readout and bidirectional rectification characteristics, with the conduction mechanism following Schottky emission behavior in the on-state. Based on its bidirectional rectification characteristics, we designed and simulated the circuit scheme of 16 Boolean logic and one-bit full-adder through cascaded operations. Both the input and output logic values are represented in the form of resistance, without the need for additional form conversion circuits. The state writing is performed by pulse-controlled polarization flipping, and the state reading is non-destructive. The logic circuits in this work demonstrate superior performance with ultralow computing power consumption in simulation. This breakthrough establishes a foundation for developing energy-efficient and scalable in-memory computing systems.