Study of the Van der Waals Resonant Tunneling Diode in a Mode Combining Trigger and Oscillator Functions

Van der Waals resonant tunneling diodes (vdW RTDs) with an N-shaped I–V characteristic enable the development of highly efficient components for data processing and transmission systems. The behavior of a vdW RTD as a dynamic system depends significantly on the total resistance R of the graphene layers and the metal contacts to them, as well as the minimum absolute negative differential resistance RN of the I–V characteristic of the vdW heterojunction. The system can function as an oscillator if RN $$ \gg $$ R or as a trigger if RN $$ \ll $$ R. These cases have been fully investigated. The case of RN < R has been studied insufficiently, especially for R ≈ RN, when a vdW RTD as a dynamic system can exhibit both trigger and oscillator properties. This paper analyzes the “mixed” mode for the I–V characteristic of a vdW heterojunction represented by a cubic trinomial. Methods of the qualitative theory of differential equations are used. It is shown that the experimental I–V characteristic of a vdW RTD at RN < R has a rectangular loop and, when self-oscillations occur, can additionally exhibit a sloping plateau. A method for reconstructing the I–V characteristic of a heterojunction from the characteristic parameters of the experimental I–V characteristic of a vdW RTD is proposed. The results obtained for the I–V characteristic of a vdW heterojunction in the form of a cubic trinomial can be applied to real RTDs by approximating the falling section of the I–V characteristic of a vdW heterojunction by a cubic trinomial. These results can serve as a supplement to the theory and design of circuits containing tunneling diodes (TD circuits).

Authors

Institutions

Publication Details

Journal
Semiconductors
Published
2025-12-01
DOI
https://doi.org/10.1134/s1063782625700149
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Study of the Van der Waals Resonant Tunneling Diode in a Mode Combining Trigger and Oscillator Functions

G. S. Rychkov, D. A. Korlyakov, G. N. Petrukhin, E. A. Il’ichev et al.
Semiconductors
Graphene research and applications
article

Study of the Van der Waals Resonant Tunneling Diode in a Mode Combining Trigger and Oscillator Functions

G. S. Rychkov, D. A. Korlyakov, G. N. Petrukhin, E. A. Il’ichev, A. N. Demidova
article en

Abstract

Van der Waals resonant tunneling diodes (vdW RTDs) with an N-shaped I–V characteristic enable the development of highly efficient components for data processing and transmission systems. The behavior of a vdW RTD as a dynamic system depends significantly on the total resistance R of the graphene layers and the metal contacts to them, as well as the minimum absolute negative differential resistance RN of the I–V characteristic of the vdW heterojunction. The system can function as an oscillator if RN $$ \gg $$ R or as a trigger if RN $$ \ll $$ R. These cases have been fully investigated. The case of RN < R has been studied insufficiently, especially for R ≈ RN, when a vdW RTD as a dynamic system can exhibit both trigger and oscillator properties. This paper analyzes the “mixed” mode for the I–V characteristic of a vdW heterojunction represented by a cubic trinomial. Methods of the qualitative theory of differential equations are used. It is shown that the experimental I–V characteristic of a vdW RTD at RN < R has a rectangular loop and, when self-oscillations occur, can additionally exhibit a sloping plateau. A method for reconstructing the I–V characteristic of a heterojunction from the characteristic parameters of the experimental I–V characteristic of a vdW RTD is proposed. The results obtained for the I–V characteristic of a vdW heterojunction in the form of a cubic trinomial can be applied to real RTDs by approximating the falling section of the I–V characteristic of a vdW heterojunction by a cubic trinomial. These results can serve as a supplement to the theory and design of circuits containing tunneling diodes (TD circuits).

SemiconductorsVol. 59(13)
National Research University of Electronic Technology (RU)
Openalex Percentile: Top 46%
Graphene research and applications
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.