Parasitic Inductance Assessment of E-GaN DPT Circuit Through Finite Element Analysis

This article explores the high-frequency characteristics of gallium nitride (GaN) power-switching devices and evaluates their application performance using a double-pulse test (DPT) circuit model. With the increasing adoption of GaN power-switching devices in high-performance and miniaturized electronic products, their low junction capacitance makes them highly suitable for high-frequency applications. However, parasitic inductance in the power loop can introduce resonance phenomena, impacting system stability and switching performance. To address this, this study integrates the parasitic parameters of printed circuit boards (PCBs) with the nonlinear junction capacitance characteristics of GaN devices. Finite element analysis (FEA) is employed to extract PCB parasitic inductance values and analyze their effects on GaN power-switching behavior. The findings indicate that precise extraction and analysis of parasitic inductance are critical for optimizing the performance of GaN switching devices. Additionally, this study investigates mitigation strategies to minimize parasitic inductance, ultimately enhancing GaN device design and reliability. The insights from this research provide valuable guidance for the development of GaN power devices in high-frequency applications.