Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity

ABSTRACT Organic electrochemical transistors (OECTs) have been of tremendous interest for neuromorphic memories thanks to their excellent device uniformity, facile processibility and biocompatibility. One of the hurdles for precise emulation of synaptic functions is poor long‐term plasticity, mainly originated by facile diffusion of mobile ions between a channel and an electrolyte gate dielectric. Herein, we present that a gate dielectric of ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], blended with an ionic liquid of 1‐ethyl‐3‐methylimidazolium bis(trifluoromethylsulfonyl) imide ([EMIM][TFSI]), is beneficial for enhancing long‐term plasticity for OECTs. Comparative studies for P(VDF‐TrFE) and nonferroelectric fluorinated polymers indicate that polar ferroelectric β ‐phase crystals assist regulation of mobile ions in a nonvolatile manner, leading to a large memory window with an ON/OFF drain current ratio of ∼10 3 . The ferroelectric OECT exhibits long‐term potentiation (LTP) and long‐term depression (LTD) characteristics, and long‐term retention time of >10 3 s with distinguishable synaptic weight states. Our strategy provides a simple route for emulation of long‐term synaptic behavior, potentially applicable for diverse sort of electrochemical synapses.

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Publication Details

Journal
Advanced Electronic Materials
Published
2026-01-14
DOI
https://doi.org/10.1002/aelm.202500598
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity

Jaewon Choi, Chan-Woo Park, Minsub Lee, Jaehui Cheon et al.
Advanced Electronic Materials
Advanced Memory and Neural Computing
article

Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity

Jaewon Choi, Chan-Woo Park, Minsub Lee, Jaehui Cheon, Jaegyun Im, Jaegeun Lee, Beomjin Jeong, Donghee Shin, Jong S. Park
article en

Abstract

ABSTRACT Organic electrochemical transistors (OECTs) have been of tremendous interest for neuromorphic memories thanks to their excellent device uniformity, facile processibility and biocompatibility. One of the hurdles for precise emulation of synaptic functions is poor long‐term plasticity, mainly originated by facile diffusion of mobile ions between a channel and an electrolyte gate dielectric. Herein, we present that a gate dielectric of ferroelectric poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], blended with an ionic liquid of 1‐ethyl‐3‐methylimidazolium bis(trifluoromethylsulfonyl) imide ([EMIM][TFSI]), is beneficial for enhancing long‐term plasticity for OECTs. Comparative studies for P(VDF‐TrFE) and nonferroelectric fluorinated polymers indicate that polar ferroelectric β ‐phase crystals assist regulation of mobile ions in a nonvolatile manner, leading to a large memory window with an ON/OFF drain current ratio of ∼10 3 . The ferroelectric OECT exhibits long‐term potentiation (LTP) and long‐term depression (LTD) characteristics, and long‐term retention time of >10 3 s with distinguishable synaptic weight states. Our strategy provides a simple route for emulation of long‐term synaptic behavior, potentially applicable for diverse sort of electrochemical synapses.

Advanced Electronic MaterialsVol. 12(3)
Pusan National University (KR)
Openalex Percentile: Top 89%
Advanced Memory and Neural Computing
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Ferroelectric–Electrolyte Hybrid Gate Dielectrics for Organic Synaptic Transistors with Long‐Term Plasticity — Jaewon Choi, Chan-Woo Park, et al. · Advanced Electronic Materials (2026) | TGRS Research Map | TGRS