Xenes for Next‐Generation Photodetectors: Recent Advances, Challenges, and Future Perspectives

ABSTRACT Monoelemental Two Dimensional (2D) materials, collectively known as Xenes‐such as silicene, germanene, stanene, phosphorene, and borophene‐have garnered significant attention as prospective candidates for high‐performance optoelectronic devices. This interest stems from their distinctive structural, electronic, and optical attributes, including tunable bandgaps, elevated carrier mobility, and anisotropic light‐matter interactions, which make them particularly well‐suited for advanced photodetector applications. This comprehensive review provides an in‐depth examination of Xene materials, their inherent properties, and their utilization in photodetector technologies. We meticulously analyze current fabrication methodologies, diverse device architectures, and key performance indicators across a broad spectral range, from the ultraviolet (UV) to the infrared (IR) regions. Moreover, the paper critically addresses the prevailing challenges associated with environmental degradation, integration complexities with various substrates, and scalability issues, while also exploring potential strategies to overcome these limitations. Finally, this review delineates future perspectives and identifies promising avenues for the continued advancement of Xene‐based photodetectors. The ultimate aim is to facilitate their transition from laboratory‐scale demonstrations to practical, scalable optoelectronic platforms, thereby unlocking their full potential in the next generation of sensing and imaging technologies.