0.53-mΩ.cm <sup>2</sup> /592-V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination
In this letter, we report high-performance Pt/GaN quasi-vertical Schottky barrier diodes on sapphire substrate. With a 5 μm drift layer and a highly controlled fabrication process, the devices demonstrate an extremely low on-resistance of 0.53 mΩ.cm² while exhibiting a high breakdown voltage of 592 V. The devices achieve a state-of-the-art Baliga’s figure of merit of 0.66 GW.cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup>. The turn-on voltage is also notably low at 0.72 V. Remarkably, the high device performance reported in this work was achieved without the use of passivation or edge termination techniques, in clear contrast to other recent studies.
Authors
- Beatriz Mayumi Kayo Orfão
- Hugo Bouillaud
- Etienne Okada
- Mohammed Zaknoune
- Malek Zegaoui
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Lille (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2026-01-12
- DOI
- https://doi.org/10.1109/led.2026.3652934
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00