Tunable SiC-Based Photocatalysts for Hydrogen Generation and Environmental Remediation
Silicon carbide (SiC) has emerged as a robust and tunable semiconductor for advanced photocatalytic applications. This review provides a comprehensive overview of recent progress in the development of SiC-based materials for environmental remediation and solar-driven hydrogen production. Key aspects discussed include morphological engineering, heterostructure design, doping strategies, and plasmonic enhancement. Emphasis is placed on structure-activity relationships, insights from density functional theory (DFT) and machine learning (ML) models, and synergistic effects in composite systems. This review concludes with a critical analysis of current challenges and future research directions, highlighting the potential of SiC implementation as a sustainable platform for next-generation photocatalytic technologies.
Authors
- Ф. Р. Капсаламова (ORCID: https://orcid.org/0000-0003-4364-7827)
- David J. Nagel
- Nurlan Bakranov
- Dina Bakranova
- Danil Boukhvalov
Institutions
- Altair Engineering (United States) (US)
- Nanjing Forestry University (CN)
- Kazakh-British Technical University (KZ)
- George Washington University (US)
- Kazakh-American University (KZ)
Publication Details
- Journal
- International Journal of Molecular Sciences
- Published
- 2026-01-13
- DOI
- https://doi.org/10.3390/ijms27020774
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00