Erratum to: Interface Trap-Induced Impact in Linearity and Small-Signal Performance of InAs-Channel TFETs: Reliability Implications

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Journal
Doklady Physics
Published
2025-12-01
DOI
https://doi.org/10.1134/s102833582501001x
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
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article

Erratum to: Interface Trap-Induced Impact in Linearity and Small-Signal Performance of InAs-Channel TFETs: Reliability Implications

Rajeev Kumar Sachan, Vedvrat
Doklady Physics
Advancements in Semiconductor Devices and Circuit Design
article

Erratum to: Interface Trap-Induced Impact in Linearity and Small-Signal Performance of InAs-Channel TFETs: Reliability Implications

Rajeev Kumar Sachan, Vedvrat
article en

Abstract

No abstract available for this paper.
Doklady PhysicsVol. 70(9-12)
Indian Institute of Technology Kanpur (IN)
Openalex Percentile: Top 40%
Advancements in Semiconductor Devices and Circuit Design
DOIOpen Access PDFOpenAlex
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Erratum to: Interface Trap-Induced Impact in Linearity and Small-Signal Performance of InAs-Channel TFETs: Reliability Implications — Rajeev Kumar Sachan, Vedvrat · Doklady Physics (2025) | TGRS Research Map | TGRS