Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting Diodes

We present the development of InGaN/AlGaN nanowire light-emitting diodes (LEDs) as superior candidates for extreme thermal environments, demonstrating exceptional performance even at 1000 °C. Through a combination of advanced simulations and experimental validation, our study reveals that nanowire LEDs effectively mitigate thermal stress and enhance heat dissipation compared with traditional thin-film LEDs. This is attributed to their high surface-to-volume ratio and reduced defect density. Remarkably, these nanowire LEDs exhibit virtually zero efficiency droop up to 500 °C and minimal droop between 600 °C and 1000 °C, while maintaining stable peak wavelength emission (∼525 nm), outperforming thin-film counterparts. The improved thermal management is due to efficient phonon transport and strain relaxation inherent to nanowire structures. These findings highlight InGaN/AlGaN nanowire LEDs as a transformative solution for high-temperature applications such as space exploration, industrial processes, and advanced sensing, offering unparalleled reliability in harsh conditions.