Simulation of Tandem Perovskite/Silicon Solar Cell Characteristics with a Black Silicon Interlayer

The influence of a black silicon (b-Si) interlayer on the photovoltaic characteristics of tandem perovskite/silicon cells was investigated by numerical modeling in the SCAPS-1D software environment. It is shown that a 640 nm thick nanotextured b-Si interlayer increases the efficiency of the modeled device from 27.17 to 28.97%. The primary contribution to the efficiency gain is attributed to an increase in short-circuit current density, resulting from exceptionally low reflection and enhanced light trapping in the bottom silicon subcell. The qualitative agreement between the simulation results and the experiment, as well as the dominant contribution of optical effects to the observed performance improvement, is demonstrated. Using parametric analysis, the optimal thickness of the b-Si interlayer (∼530 nm) was determined, ensuring current matching between the subcells and a maximum efficiency of 29%.

Authors

Institutions

Publication Details

Journal
Journal of Contemporary Physics (Armenian Academy of Sciences)
Published
2025-09-01
DOI
https://doi.org/10.1134/s1068337225700616
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Simulation of Tandem Perovskite/Silicon Solar Cell Characteristics with a Black Silicon Interlayer

Abdullahi Usman, G. Y. Ayvazyan, L. M. Lakhoyan
Journal of Contemporary Physics (Armenian Academy of Sciences)
Silicon and Solar Cell Technologies
article

Simulation of Tandem Perovskite/Silicon Solar Cell Characteristics with a Black Silicon Interlayer

Abdullahi Usman, G. Y. Ayvazyan, L. M. Lakhoyan
article en

Abstract

The influence of a black silicon (b-Si) interlayer on the photovoltaic characteristics of tandem perovskite/silicon cells was investigated by numerical modeling in the SCAPS-1D software environment. It is shown that a 640 nm thick nanotextured b-Si interlayer increases the efficiency of the modeled device from 27.17 to 28.97%. The primary contribution to the efficiency gain is attributed to an increase in short-circuit current density, resulting from exceptionally low reflection and enhanced light trapping in the bottom silicon subcell. The qualitative agreement between the simulation results and the experiment, as well as the dominant contribution of optical effects to the observed performance improvement, is demonstrated. Using parametric analysis, the optimal thickness of the b-Si interlayer (∼530 nm) was determined, ensuring current matching between the subcells and a maximum efficiency of 29%.

Journal of Contemporary Physics (Armenian Academy of Sciences)Vol. 60(3)
National Polytechnic University of Armenia (AM), King Mongkut's University of Technology Thonburi (TH)
Affordable and clean energy
Openalex Percentile: Top 40%
Silicon and Solar Cell Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Simulation of Tandem Perovskite/Silicon Solar Cell Characteristics with a Black Silicon Interlayer — Abdullahi Usman, G. Y. Ayvazyan, et al. · Journal of Contemporary Physics (Armenian Academy of Sciences) (2025) | TGRS Research Map | TGRS