Resistive Switching Behavior in Lead-Free Double Perovskite Cs ₂ SnCl ₆ for Multilevel Flexible Device Application

Double halide perovskite resistive random-access memory (RRAM) has become a frontier research direction in next-generation optoelectronic memory due to its rapid resistive switching characteristics based on ion migration. Among them, lead-free tin-based double halide perovskites exhibit enormous application potential and research value, thanks to their excellent environmental friendliness, enhanced stability, and ideal optoelectronic functional properties. Herein, Ag/Cs2SnCl6&PMMA (poly(methyl methacrylate))/ITO (indium tin oxide) resistive random-access memory (RRAM) devices were fabricated using a composite of PMMA and Cs2SnCl6 as the resistive switching (RS) layer. These devices exhibited bipolar resistive switching behavior, robust endurance (>1600 cycles), retention time exceeding 104 seconds, and a large on/off ratio (>100). Furthermore, the ReRAM devices maintained uniform electrical performance under various bending angles and after continuous mechanical bending for more than 103 cycles. Additionally, multilevel data storage was achieved by modulating the compliance current. This study demonstrates the significant potential of Cs2SnCl6 for applications in next-generation high-performance nonvolatile flexible memories and high-density storage devices.