Red micro-LEDs on glass substrates for ultrahigh-luminance (>105 nits) transparent displays

AlGaInP-based red micro-light-emitting diodes (micro-LEDs) with lateral dimensions of 28 × 52 µm2 were fabricated on transparent glass substrates via solder bonding for high-performance transparent displays. The fabricated devices exhibited excellent spectral stability, featuring a record-low wavelength redshift coefficient of less than 0.126 nm/K. Notably, the glass-substrate-integrated micro-LED arrays achieved an optical transmittance of 52.6% alongside a record-high luminance of 1.5 × 105 nits, underscoring their great potential for practical transparent display applications.

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Publication Details

Journal
Applied Physics Letters
Published
2026-01-12
DOI
https://doi.org/10.1063/5.0311701
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
26.95
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Red micro-LEDs on glass substrates for ultrahigh-luminance (>105 nits) transparent displays

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GaN-based semiconductor devices and materials
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Red micro-LEDs on glass substrates for ultrahigh-luminance (>105 nits) transparent displays

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article en
1 citations

Abstract

AlGaInP-based red micro-light-emitting diodes (micro-LEDs) with lateral dimensions of 28 × 52 µm2 were fabricated on transparent glass substrates via solder bonding for high-performance transparent displays. The fabricated devices exhibited excellent spectral stability, featuring a record-low wavelength redshift coefficient of less than 0.126 nm/K. Notably, the glass-substrate-integrated micro-LED arrays achieved an optical transmittance of 52.6% alongside a record-high luminance of 1.5 × 105 nits, underscoring their great potential for practical transparent display applications.

Applied Physics LettersVol. 128(2)
Xiamen University (CN)
Affordable and clean energy
Openalex Percentile: Top 2%
GaN-based semiconductor devices and materials
26.95
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