Time-resolved study of thermal effects in p-InAsSb/n-InAs0.78Sb0.22 negative luminescence devices

Analysis of optical signal variation during and after a single 500 μs pumping pulse in p-InAsSb/n-InAs0.78Sb0.22 diodes at forward and reverse biases measured in a broad band (2–14 μm), a long wave (8–14 μm), and a mid-wave (2–8 μm) infrared regions revealed a dominant role of the metal/p-InAsSb junction in the diode temperature change. Heat pumping ability vs current and vs temperature in p-InAsSb/n-InAs0.78Sb0.22 samples at a reverse bias have been qualitatively explained within the ranks of existing ideas on thermoelectric effects in diodes with a thin base and metal contacts.