Epitaxial growth of Ba0.7Sr0.3TiO3 thin films on R-plane sapphire: Influence of buffer layers on structural and dielectric properties at microwaves

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SPIRE - Sciences Po Institutional REpository
Published
2025-09-16
Primary Topic
Ferroelectric and Piezoelectric Materials
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article

Epitaxial growth of Ba0.7Sr0.3TiO3 thin films on R-plane sapphire: Influence of buffer layers on structural and dielectric properties at microwaves

M. Himdi, Morgane Lebarbe, Quentin Simon, Edgar Chaslin et al.
SPIRE - Sciences Po Institutional REpository
Ferroelectric and Piezoelectric Materials
article

Epitaxial growth of Ba0.7Sr0.3TiO3 thin films on R-plane sapphire: Influence of buffer layers on structural and dielectric properties at microwaves

M. Himdi, Morgane Lebarbe, Quentin Simon, Edgar Chaslin, Xavier Castel
article en

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SPIRE - Sciences Po Institutional REpository
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Ferroelectric and Piezoelectric Materials
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Epitaxial growth of Ba0.7Sr0.3TiO3 thin films on R-plane sapphire: Influence of buffer layers on structural and dielectric properties at microwaves — M. Himdi, Morgane Lebarbe, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS