Recent Advances in Si‐Based Photodiodes for 1–14 µm Infrared Detection

ABSTRACT The extension of the response spectrum of Si photodiode photodetectors (PDs) is a subject of extensive research, leveraging the benefits of Si complementary metal–oxide semiconductor (CMOS) technology for cost‐effective and reliable read‐out circuit manufacturing. Numerous high‐performance, versatile, and large‐array PDs with creative absorption materials and configurations have been successfully developed on the Si platform. These advancements include hyperdoping, heterojunction engineering, advanced nanophotonics, and Si photonics. Consequently, a thorough review of the recent developments in Si photodiode infrared (IR) PDs operating within the 1–14 µm wavelength range is both essential and meaningful. This review presents an overview of the latest innovations in Si photodiode infrared PDs. It commences with an investigation into fundamental structures and operational mechanisms, providing a detailed explanation of key operating principles. The discussion then transitions to a comprehensive analysis of various types of Si IR PDs. Following this, attention is directed toward an examination of integrated devices. The review further emphasizes the wide‐ranging optoelectronic applications of Si PDs, including (algorithm) imaging, (encryption) communication, light logic operations, and bio‐detection technologies. Finally, the review concludes by addressing both the challenges and perspectives associated with advancing Si photodiode IR PDs for enhanced photodetection capabilities.