Atomic-layer precision etching of SiO <sub>2</sub> using sequential molecular adsorption and plasma activation
A novel cycle-mode etching strategy combining reversible physisorption and a defect-mediated chemisorption achieves 1.4 Å per cycle, contamination-free, directional SiO 2 etching.
Authors
- Robert H. Blick (ORCID: https://orcid.org/0000-0002-3602-7702)
- Rakshith Venugopal (ORCID: https://orcid.org/0009-0009-7359-8625)
- Nian Ran
- Robert Zierold
- Jun Peng
Institutions
- Universität Hamburg (DE)
- Deutsches Elektronen-Synchrotron DESY (DE)
- Shanghai Institute of Ceramics (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2026-01-01
- DOI
- https://doi.org/10.1039/d5tc03428k
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 21.93
Funders
- Deutsche Forschungsgemeinschaft
- National Natural Science Foundation of China
- Bundesministerium für Bildung und Forschung
- Universität Hamburg
- Deutsches Elektronen-Synchrotron