Varistructure resistive switching memory devices through dynamical redox of oxides

Hafnium oxide-based resistive switching (RS) devices are promising candidates for next-generation nonvolatile memories because of their ability to integrate into silicon electronics. However, irreversible and unidirectional movements of oxygen vacancies in functional oxide in memristors limit the improvement of ON/OFF ratio and endurance simultaneously as well as the highest working temperature up to 300 °C. Here, we design varistructure RS devices through oxygen vacancy engineering and dynamical redox of Ta. The ON/OFF ratio and the endurance are largely co-improved due to dynamical redox of Ta at the interfaces. Compared to all current RS memories, it cumulatively demonstrates high endurance (105), retention (104 s), ON/OFF ratio (104–106), operation speed (75 ns), and low write voltage (2 V). Remarkably, the RS devices remain stable up to 300 °C.