Interfacial spin configurations and the microscopic origin of exchange bias at the IrMn/CoFeB interface

Exchange bias fields at antiferromagnet/ferromagnet (AFM/FM) interfaces play a crucial role in the performance of spintronic devices. Despite extensive research, the physical origin of exchange bias remains incompletely understood. In this study, we conduct a detailed investigation of a prototype AFM/FM interface widely used in spintronic applications, i.e., the IrMn/CoFeB interface. High-resolution synchrotron X-ray measurements reveal the existence of uncompensated Mn spins at the interface. While most of these spins are strongly coupled to the adjacent CoFeB layer, a small fraction remains pinned to the underlying IrMn underlayer. Element-specific X-ray magnetic circular dichroism hysteresis loops show that these pinned spins can be switched by increasing the annealing magnetic field. Furthermore, micromagnetic simulations indicate that an imbalance in the quantity of antiparallel pinned spins contributes to the observed variation in exchange bias. Overall, these findings offer important insights into the microscopic mechanisms governing exchange bias and its tunability.

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Publication Details

Journal
Fundamental Research
Published
2026-01-01
DOI
https://doi.org/10.1016/j.fmre.2026.01.003
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

Interfacial spin configurations and the microscopic origin of exchange bias at the IrMn/CoFeB interface

Zhaochun Liu, Peter Bencok, Jiahao Liu, W. X. Li et al.
Fundamental Research
Magnetic properties of thin films
article

Interfacial spin configurations and the microscopic origin of exchange bias at the IrMn/CoFeB interface

Zhaochun Liu, Peter Bencok, Jiahao Liu, W. X. Li, Yongzhuo Zhang, P. Steadman, Shouzhong Peng, Xingtai Chen, Wenqing Liu, Weisheng Zhao, Jiaqi Lu
article en

Abstract

Exchange bias fields at antiferromagnet/ferromagnet (AFM/FM) interfaces play a crucial role in the performance of spintronic devices. Despite extensive research, the physical origin of exchange bias remains incompletely understood. In this study, we conduct a detailed investigation of a prototype AFM/FM interface widely used in spintronic applications, i.e., the IrMn/CoFeB interface. High-resolution synchrotron X-ray measurements reveal the existence of uncompensated Mn spins at the interface. While most of these spins are strongly coupled to the adjacent CoFeB layer, a small fraction remains pinned to the underlying IrMn underlayer. Element-specific X-ray magnetic circular dichroism hysteresis loops show that these pinned spins can be switched by increasing the annealing magnetic field. Furthermore, micromagnetic simulations indicate that an imbalance in the quantity of antiparallel pinned spins contributes to the observed variation in exchange bias. Overall, these findings offer important insights into the microscopic mechanisms governing exchange bias and its tunability.

Fundamental Research
University of Liverpool (GB), Royal Holloway University of London (GB), Diamond Light Source (GB), Hefei Institute of Technology Innovation (CN), Beihang University (CN)
Openalex Percentile: Top 91%
Magnetic properties of thin films
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Interfacial spin configurations and the microscopic origin of exchange bias at the IrMn/CoFeB interface — Zhaochun Liu, Peter Bencok, et al. · Fundamental Research (2026) | TGRS Research Map | TGRS