Effect of perovskite absorber thickness and working temperature on the hematite-based ETL in PSCs

A key factor in increasing the efficiency of perovskite solar cell (PCSs) is optimizing the thickness of the absorber and the operating temperature. In order to examine the impact of these factors, a planar n-i-p PSCs with the configuration FTO/α-Fe2O3/MAPbI3/Spiro-OMeTAD/Au was simulated using SCAPS-1D. The results indicate that the charge carrier generation and transportation are strongly governed by the thickness of MAPbI3 absorber layer. When tune to 600 nm thickness, the device has a Jsc of 22.1 mA/cm2, an Voc of 1.06 V, a FF of 77.4 %, and an overall PCE of 18.3 %. When layers are too thin (<300 nm), they limit the photon absorption, which lower the Jsc. When layers are too thick (>800nm), they cause recombination losses that lower the FF. Variation in the temperature also affect how well the device works in different temperature conditions. For example, raising form 300 K to 350 K lowers the Voc and PCE because of non-radiative recombination happens more often. These finding highlight that careful control of absorber thickness coupled with thermal stability of the α-Fe2O3 ETL is crucial for achieving stable and high-efficiency PSCs.

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Publication Details

Journal
Springer Link (Chiba Institute of Technology)
Published
2026-01-07
DOI
https://doi.org/10.1051/epjconf/202634501038/pdf
Primary Topic
Perovskite Materials and Applications
Type
article
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article

Effect of perovskite absorber thickness and working temperature on the hematite-based ETL in PSCs

Prajwal Reddy Korem, Manisha Kumari, Ankush Kumar Tangra, Manpreet Kaur
Springer Link (Chiba Institute of Technology)
Perovskite Materials and Applications
article

Effect of perovskite absorber thickness and working temperature on the hematite-based ETL in PSCs

Prajwal Reddy Korem, Manisha Kumari, Ankush Kumar Tangra, Manpreet Kaur
article en

Abstract

A key factor in increasing the efficiency of perovskite solar cell (PCSs) is optimizing the thickness of the absorber and the operating temperature. In order to examine the impact of these factors, a planar n-i-p PSCs with the configuration FTO/α-Fe2O3/MAPbI3/Spiro-OMeTAD/Au was simulated using SCAPS-1D. The results indicate that the charge carrier generation and transportation are strongly governed by the thickness of MAPbI3 absorber layer. When tune to 600 nm thickness, the device has a Jsc of 22.1 mA/cm2, an Voc of 1.06 V, a FF of 77.4 %, and an overall PCE of 18.3 %. When layers are too thin (<300 nm), they limit the photon absorption, which lower the Jsc. When layers are too thick (>800nm), they cause recombination losses that lower the FF. Variation in the temperature also affect how well the device works in different temperature conditions. For example, raising form 300 K to 350 K lowers the Voc and PCE because of non-radiative recombination happens more often. These finding highlight that careful control of absorber thickness coupled with thermal stability of the α-Fe2O3 ETL is crucial for achieving stable and high-efficiency PSCs.

Springer Link (Chiba Institute of Technology)
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Perovskite Materials and Applications
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