Structural Evolution and Electronic Properties of Ruthenium-Doped Silicon Clusters: Anion Photoelectron Spectroscopy and Theoretical Calculations of Anionic and Neutral RuSi <sub> <i>n</i> </sub> ( <i>n</i> = 13–17) Clusters
The structural evolution, electronic properties, and thermodynamic stability of ruthenium-doped silicon clusters (RuSi<sub><i>n</i></sub><sup>-</sup>, <i>n</i> = 13-17) are systematically investigated through a combination of anion photoelectron spectroscopy and high-level theoretical calculations. Anion photoelectron spectra recorded at 266 nm exhibit size-dependent electronic transitions, with vertical detachment energies (VDEs) ranging from 2.87 to 3.28 eV─the computed VDE values show excellent agreement with the experimental data (deviation <0.11 eV), which validates the structural models. Global minimum structures are identified through a hybrid Crystal Structure AnaLYsis by Particle Swarm Optimization (CALYPSO) and ABCluster search strategy, refined using density functional calculations (DFT) at the B3LYP/def2-TZVPD level, and corroborated by DLPNO-CCSD(T) single-point energy calculations. Both neutral and anionic clusters adopt structural motifs based on a Ru-encapsulating distorted bicapped pentagonal prism, with successive Si atom capping governing geometric evolution and stability. Notable magic-number behavior emerges for anionic RuSi<sub>17</sub><sup>-</sup> and neutral RuSi<sub>14</sub> (compact geometry and favorable electronic configuration). Natural population analysis confirms that Ru acts as an electron acceptor, with charge distributions closely correlating to VDE trends. Energetic descriptors─Ru binding energy (<i>E</i><sub>b</sub> (Ru)) and Si incremental binding energy (Δ<i>E</i><sup>I</sup> (Si))─reveal pronounced size- and charge-state-dependent stability: neutrals exhibit higher <i>E</i><sub>b</sub> (Ru) (9.14-10.15 eV) than anions (6.88-7.91 eV), while positive Δ<i>E</i><sup>I</sup> (Si) values (3.41-5.37 eV for neutrals; 3.87-4.74 eV for anions) confirm that Si incorporation enhances stability. These results underscore the intricate interplay of Ru-Si bonding, geometric configuration, and electronic structure in governing cluster stability, with the charge state serving as a key modulator.
Authors
- Shengjie Lu (ORCID: https://orcid.org/0000-0003-3365-6383)
Institutions
- Heze University (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry A
- Published
- 2026-01-08
- DOI
- https://doi.org/10.1021/acs.jpca.5c08131
- Primary Topic
- Synthesis and characterization of novel inorganic/organometallic compounds
- Type
- article
- Field-Weighted Citation Impact
- 0.00