Close‐Spaced Sublimation of CdCl <sub>2</sub> Enables Uniform CdS Thin Films for Certified 8.08%‐Efficient Sb <sub>2</sub> S <sub>3</sub> Solar Cells
CdCl<sub>2</sub> treatment has emerged as a transformative protocol for augmenting the crystallinity and electrical performance of CdS thin films, representing a foundational advancement in the development of high-efficiency CdTe and Sb<sub>2</sub>(S,Se)<sub>3</sub> solar cells. However, the conventional spin-coating method causes inhomogeneous deposition of CdCl<sub>2</sub> on the surface of CdS films, resulting in vastly different CdS(solid)-CdCl<sub>2</sub>(solid) and CdS(solid)-CdCl<sub>2</sub>(vapor) reaction modes during annealing. This process activates pinhole or crack formation and causes grain inhomogeneity due to the CdS(solid)-CdCl<sub>2</sub>(solid) faster reaction rate, deleteriously impacting the device performance through compromised carrier extraction and enhanced interfacial recombination. This study introduces a close-spaced sublimation (CSS) approach for uniform CdCl<sub>2</sub> vapor treatment of CdS films. This methodology disrupts the inhomogeneous growth paradigm, enabling the conformal deposition of ultrathin CdS layers (∼20 nm) on FTO/TiO<sub>2</sub> substrates. The optimized CdS thin films demonstrated enhanced charge extraction efficiency and suppressed interfacial recombination-evidence of improved carrier transport kinetics. Under AM 1.5G illumination, the best Sb<sub>2</sub>S<sub>3</sub> solar cell fabricated through this strategy delivered a record power conversion efficiency of 8.30% (certified 8.08%). The CSS technique, which enables controlled homogeneous crystallization, establishes a paradigm for realizing high-quality CdS films and is an essential breakthrough for high-efficiency Sb<sub>2</sub>(S,Se)<sub>3</sub> and CdTe photovoltaic devices.
Authors
- Y.‐Z. Yin (ORCID: https://orcid.org/0000-0002-7870-4396)
- Jie Yang (ORCID: https://orcid.org/0000-0003-1283-3993)
- Jiangfeng Liu (ORCID: https://orcid.org/0000-0002-4847-7102)
- Zhen Yu (ORCID: https://orcid.org/0000-0001-5210-2672)
- Huanhuan Zhang (ORCID: https://orcid.org/0000-0002-2255-4261)
- Jingyi Yan (ORCID: https://orcid.org/0009-0001-4481-2145)
- C. Y. Wu (ORCID: https://orcid.org/0000-0003-2176-7019)
- Haolin Wang
- Hongling Guo
- Zhixinke Li
- Tao Chen
- Yuqian Huang
- Lin Feng
Institutions
- Xinyang Normal University (CN)
- Tianjin University of Science and Technology (CN)
- Tianjin University of Technology (CN)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
Publication Details
- Journal
- Advanced Materials
- Published
- 2026-01-09
- DOI
- https://doi.org/10.1002/adma.202520937
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 21.93