Fast and Sensitive On-Chip Homo/Heterodyne Detection for Terahertz Communication and Imaging
Enhancing electromagnetic coupling to achieve interaction between light and matter is imperative to develop high-performance terahertz devices. Here, we report an ultrasensitive terahertz detector based on the quasi-one-dimensional, low-energy Dirac Fermions in the topological semimetal-TaNiTe<sub>5</sub>, integrated with an asymmetric bow-tie antenna to enhance field localization and directional light coupling. The device operates via photothermoelectric (PTE) effect, enabling self-powered, homo/heterodyne dual-mode detection across from millimeter to terahertz band. It achieves room-temperature operation at 0.435 THz with a responsivity of 0.77 A/W, a noise equivalent power (NEP) below 9.71 pW·Hz<sup>1/2</sup>, a specific detectivity (D*) of 1.03 × 10<sup>11</sup> Jones, and a response time less than 20 ns. Furthermore, owing to the unique electronic band structure and excellent carrier dynamics characteristics of the semimetal-TaNiTe<sub>5</sub>, the device enables heterodyne mixing with a radio frequency (RF) bandwidth exceeds 108 GHz, accompanied by intermediate frequency (IF) bandwidth >26.5 GHz. Leveraging its excellent performance, we demonstrate its potential for sub-THz communications and high-quality imaging in terms of encrypted data-information exchange. Our work establishes a strategy for achieving chip-level integration with versatile abilities for communication, and imaging at terahertz band.
Authors
- Amar Agarwal (ORCID: https://orcid.org/0000-0003-1011-4784)
- X. H. Wang (ORCID: https://orcid.org/0000-0002-8806-437X)
- K. Zhang
- Huichuan Fan
- Yi Wei (ORCID: https://orcid.org/0000-0001-8712-7562)
- Wei Lu
- Yan Huang
- Lin Wang
- Xiaokai Pan
- Zhen Hu
- Pingping Chen
- Mengjie Jiang
- Xiaoshuang Chen
- Yichong Zhang
Institutions
- ShanghaiTech University (CN)
- Shanghai Institute of Technical Physics (CN)
- Shanghai Dianji University (CN)
- University of Chinese Academy of Sciences (CN)
- Indian Institute of Technology Kanpur (IN)
Publication Details
- Journal
- ACS Nano
- Published
- 2026-01-08
- DOI
- https://doi.org/10.1021/acsnano.5c17628
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00