Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control

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Publication Details

Journal
Apollo (University of Cambridge)
Published
2025-09-16
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control

Jiawei; paragon-plus: 7866584 Zhang, paragon-plus: 1136231, paragon-plus: 7784233, paragon-plus: 7819304 et al.
Apollo (University of Cambridge)
GaN-based semiconductor devices and materials
article

Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control

Jiawei; paragon-plus: 7866584 Zhang, paragon-plus: 1136231, paragon-plus: 7784233, paragon-plus: 7819304, Menno J.; paragon-plus: 2916733 Kappers
article en

Abstract

No abstract available for this paper.
Apollo (University of Cambridge)
Openalex Percentile: Top 28%
GaN-based semiconductor devices and materials
OpenAlex
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Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control — Jiawei; paragon-plus: 7866584 Zhang, paragon-plus: 1136231, et al. · Apollo (University of Cambridge) (2025) | TGRS Research Map | TGRS