Correction to “Structural Properties of Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Integrated on Silicon”
Authors
- Evert Pieter Houwman (ORCID: https://orcid.org/0000-0003-2722-6045)
- Gertjan Koster (ORCID: https://orcid.org/0000-0001-5478-7329)
- Majid Ahmadi (ORCID: https://orcid.org/0000-0003-2321-3060)
- Kit de Hond (ORCID: https://orcid.org/0000-0002-1532-6906)
- Mart Salverda (ORCID: https://orcid.org/0000-0003-2275-4041)
- Guus Rijnders (ORCID: https://orcid.org/0000-0002-4638-0630)
- Bart J. Kooi (ORCID: https://orcid.org/0000-0002-0311-4105)
- Beatriz Noheda
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2026-01-07
- DOI
- https://doi.org/10.1021/acsaelm.5c02645
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00