Thickness Scaling of Integrated Pt/(Al <sub>0.9</sub> Sc <sub>0.1</sub> )N/Pt Capacitor Stacks to 30 nm (Adv. Electron. Mater. 1/2026)
Ferroelectric Memory In their Research Article (10.1002/aelm.202500451), Hiroshi Funakubo and co-workers demonstrate that the total thickness of the device stack can be scaled down to 30 nm for the first time while maintaining a remanent polarization exceeding 100 μC cm−2 using an aluminum scandium nitride ((Al,Sc)N) film sandwiched between Pt electrodes. This next-generation nitride ferroelectric material enables aggressive thickness scaling for integration into ferroelectric memory, representing a significant advance for future electronic devices.
Authors
- Hiroshi Funakubo
- Toshikazu Irisawa (ORCID: https://orcid.org/0009-0006-6192-6239)
- K. Okamoto (ORCID: https://orcid.org/0000-0001-7952-8729)
- Yoshiko Nakamura
- Soshun Doko (ORCID: https://orcid.org/0009-0009-8560-4412)
- Koji Tsunekawa (ORCID: https://orcid.org/0000-0002-1420-0834)
- Nana Sun (ORCID: https://orcid.org/0009-0002-8729-0532)
- Naoko Matsui (ORCID: https://orcid.org/0009-0004-3075-0598)
Institutions
- Tokyo Institute of Technology (JP)
- Canon Anelva (Japan) (JP)
- Institute for Global Environmental Strategies (JP)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2026-01-01
- DOI
- https://doi.org/10.1002/aelm.70215
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00