Drain-Voltage Assessment-Based RC Snubber Design Approach for GaN HEMT Flyback Converters

Conventional RC snubber design relies on oscillation frequency-based estimation, which is often influenced by uncontrolled parasitic elements and can therefore limit the accuracy of surge voltage prediction in GaN HEMT flyback converters. To overcome this limitation, a drain-voltage assessment-based design approach is introduced, in which the snubber parameters are extracted directly from the measured voltage characteristics during the turn off transition. This method allows the surge voltage to be modeled more precisely and enables the snubber capacitance to be selected without unnecessary oversizing. Simulation results using the GaN Systems GS66516T device show that the proposed approach reduces the total power loss by 27.67% and 21.84% relative to two empirical design methods and achieves up to 53.64% lower loss compared with other RC combinations in the explored design space. The method suppresses the surge voltage from 877 V to 556 V, which closely aligns with the design target of 550 V, whereas the empirical methods result in maximum voltages of 637 V and 603 V. Finally, the thermal feasibility of the snubber resistor is analytically assessed, indicating that the estimated temperature rise remains within the safe operating range of commercial components.