Unlocking the multifunctional optoelectronic potential of In-doped SnO ₂ -based heterojunction via dielectric response and impedance spectroscopy studies

Here, the metal–oxide–semiconductor (MOS) diode-based Indium (In)-doped tin oxide (SnO 2 ) is investigated. The latter is grown on n-type silicon using the spray pyrolysis method, and contacts are thermally evaporated in vacuum chamber. The capacitance (C–[Formula: see text] and conductance (G–[Formula: see text] are measured at various frequencies, 100–1000[Formula: see text]kHz, in dark and room temperature. The impact of In-doping level on C–V and G–V, loss angle, transient resistance, dielectric parameters, Nyquist and phase angle of the SnO 2 properties is examined. Besides, the experimental frequency effect on electrical characteristics is evidenced. It is revealed that G–V and C–V are found to be frequency-dependent. Nyquist graphs of Ag/SnO 2 :In/Si/Au MOS diode for doping levels of 4%, 6% and 8% are examined, and Z–Z’ plots are frequency-related.