CIGS Electrodeposition from Diluted Electrolyte: Effect of Current Density and Pulse Timing on Deposition Quality and Film Properties

Among the most promising alloys for photovoltaic applications is copper–indium–gallium–selenide (CIGS) because of its enhanced optical properties. This study examines the influence of current density and pulse timing on the electrodeposition of Cu(In, Ga)Se2 (CIGS) thin films from a dilute electrolyte. It assesses how these parameters affect deposition quality, film characteristics, and device performance. CIGS absorber layers were electrodeposited using a pulsed-current method, with systematic variations in current density and pulse on/off durations in a low-concentration solution. The deposited precursors were subsequently selenized and incorporated into fully assembled CIGS solar cell architectures. Structural characteristics were analyzed by X-ray diffraction (XRD), whereas composition and elemental distribution were assessed by energy-dispersive X-ray spectroscopy (EDS). Optical properties pertinent to photovoltaic performance were evaluated through transmittance and reflectance measurements. The results indicate that moderate current densities, when combined with brief off-times, produce dense, microcrack-free films exhibiting enhanced crystallinity and near-stoichiometric Cu/(In + Ga) and Ga/(In + Ga) ratios, in contrast to films deposited at higher current densities and extended off-times. These optimized pulse parameters also produce absorber layers with advantageous optical band gaps and improved device performance. Overall, the study demonstrates that regulating pulse parameters in attenuated electrolytes is an effective strategy to optimize CIGS film quality and to facilitate the advancement of economical, solution-based fabrication methods for high-performance CIGS solar cells.