MXene-derived MOF materials on silicon for broadband terahertz modulation

In this study, we investigate a terahertz (THz) modulator featuring a heterojunction structure composed of a metal-organic framework (MOF) material deposited on silicon. The time-domain spectrum of THz frequencies within the range of 0.3–1.6[Formula: see text]THz has been measured, from which the frequency-domain spectrum, transmittance, and modulation depth were derived through Fourier transform analysis. The formation of a Type I heterojunction between the bare silicon and the MOF material significantly enhances the carrier mobility within the MOF, allowing for a modulation depth that can achieve up to 77%. Leveraging the self-assembling properties and structural versatility of MOF materials, such as THz modulators, exhibits promising potential for a wide array of applications.