Phase transition and electrocaloric effect in PbZr <sub>0.2</sub> Ti <sub>0.8</sub> O <sub>3</sub> thin films: insights from phase-field simulations

Ferroelectric (FE) ultrathin films tend to favor a homogeneous polar state at strong interfacial bound charge screening conditions. Reducing screening parameter (<i>β</i>) may induce topological textures such as vortices, labyrinth stripes, and skyrmion bubbles (sk-bs). Here, we explore<i>β</i>- and temperature-induced phase transitions of polarization reversal in FE PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>(PZT) thin films using phase-field simulations under a 1% compressive strain. The results unveil a phase diagram comprising polarization reversal, hysteresis loop and topological structures. At room temperature, a phase transition from FE to antiferroelectric-like (AFE*) state occurs atβ∼0.53. At increasing temperatures, the FE and AFE* phases convert to a paraelectric state and form a tricritical point atβ∼0.78 and<i>T</i>∼ 770 K. Notably, at the phase boundary, a coexistence region of uniform polarization and isolated sk-bs emerges in a narrow screening range, which can be modulated by an applied electric field. Moreover, simulations of thermal effects on the FE to AFE* phase transition via the indirect method reveal a large electrocaloric effect around room temperature at low electric fields. Our findings uncover rich phenomena and elucidate underlying mechanisms in FE thin films, which hold promise for advanced device applications.

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Publication Details

Journal
Journal of Physics Condensed Matter
Published
2026-01-07
DOI
https://doi.org/10.1088/1361-648x/ae350e
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
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article

Phase transition and electrocaloric effect in PbZr 0.2 Ti 0.8 O 3 thin films: insights from phase-field simulations

Jian-Tao Wang, Xujing Li, Houbing Huang, Feng-Xia Hu et al.
Journal of Physics Condensed Matter
Ferroelectric and Piezoelectric Materials
article

Phase transition and electrocaloric effect in PbZr 0.2 Ti 0.8 O 3 thin films: insights from phase-field simulations

Jian-Tao Wang, Xujing Li, Houbing Huang, Feng-Xia Hu, Ye Tao
article en

Abstract

Ferroelectric (FE) ultrathin films tend to favor a homogeneous polar state at strong interfacial bound charge screening conditions. Reducing screening parameter (<i>β</i>) may induce topological textures such as vortices, labyrinth stripes, and skyrmion bubbles (sk-bs). Here, we explore<i>β</i>- and temperature-induced phase transitions of polarization reversal in FE PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>(PZT) thin films using phase-field simulations under a 1% compressive strain. The results unveil a phase diagram comprising polarization reversal, hysteresis loop and topological structures. At room temperature, a phase transition from FE to antiferroelectric-like (AFE*) state occurs atβ∼0.53. At increasing temperatures, the FE and AFE* phases convert to a paraelectric state and form a tricritical point atβ∼0.78 and<i>T</i>∼ 770 K. Notably, at the phase boundary, a coexistence region of uniform polarization and isolated sk-bs emerges in a narrow screening range, which can be modulated by an applied electric field. Moreover, simulations of thermal effects on the FE to AFE* phase transition via the indirect method reveal a large electrocaloric effect around room temperature at low electric fields. Our findings uncover rich phenomena and elucidate underlying mechanisms in FE thin films, which hold promise for advanced device applications.

Journal of Physics Condensed MatterVol. 38(3)
Beijing Institute of Technology (CN), Chinese Academy of Sciences (CN), Songshan Lake Materials Laboratory (CN), Institute of Physics (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 95%
Ferroelectric and Piezoelectric Materials
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