Half-quantized layer hall effect as a probe of quantized axion field

The axion insulator is a topological phase characterized by a quantized axion field, which manifests as a half-quantized anomalous Hall conductance (AHC) localized on individual surface layers. Experimental realization of this effect has remained elusive because opposite surface contributions typically cancel. We engineered magnetic axion insulator heterostructures using molecular beam epitaxy. By positioning the Fermi level asymmetrically, we isolated one topological surface state within the magnetic gap while displacing the other into a metallic regime. This technique reliably produced a half-quantized layer-resolved AHC of e²/2 h, termed the half-quantized layer Hall effect (LHE), across both parallel and antiparallel magnetization configurations in over ten devices. Our findings provide direct electrical evidence of the half-quantized LHE, a boundary signature of the quantized axion field in the bulk, which resolves a key challenge in the experimental verification of this topological quantum state and establishes a framework for spatially engineering quantized topological response.

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Publication Details

Journal
Nature Communications
Published
2026-01-07
DOI
https://doi.org/10.1038/s41467-025-68071-y
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Half-quantized layer hall effect as a probe of quantized axion field

Humian Zhou, Tianqi Jia, Tingxin Li, Yunchuan Kong et al.
Nature Communications
Topological Materials and Phenomena
article

Half-quantized layer hall effect as a probe of quantized axion field

Humian Zhou, Tianqi Jia, Tingxin Li, Yunchuan Kong, Qian Dong, Di Xiao, Zheng Hao Sun, Binbin Wang, Chang Liu, X. C. Xie, Chui-Zhen Chen, Bo Zhang, Jiayuan Hu
article en

Abstract

The axion insulator is a topological phase characterized by a quantized axion field, which manifests as a half-quantized anomalous Hall conductance (AHC) localized on individual surface layers. Experimental realization of this effect has remained elusive because opposite surface contributions typically cancel. We engineered magnetic axion insulator heterostructures using molecular beam epitaxy. By positioning the Fermi level asymmetrically, we isolated one topological surface state within the magnetic gap while displacing the other into a metallic regime. This technique reliably produced a half-quantized layer-resolved AHC of e²/2 h, termed the half-quantized layer Hall effect (LHE), across both parallel and antiparallel magnetization configurations in over ten devices. Our findings provide direct electrical evidence of the half-quantized LHE, a boundary signature of the quantized axion field in the bulk, which resolves a key challenge in the experimental verification of this topological quantum state and establishes a framework for spatially engineering quantized topological response.

Nature CommunicationsVol. 17(1)
Shanghai Jiao Tong University (CN), Peking University (CN), Huawei Technologies (China) (CN), Fudan University (CN), Soochow University (CN), Hefei University (CN), Silicon Technologies (United States) (US)
Natural Science Foundation of Shanghai, National Natural Science Foundation of China, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, Suzhou Institute of Nanotechnology, Chinese Academy of Sciences
Openalex Percentile: Top 93%
Topological Materials and Phenomena
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