Performance Enhancement of AgInTe₂ Solar Cell by using SCAPS

<ns3:p> Background Ternary ABX <ns3:sub>2</ns3:sub> semiconductors, in which A represents silver, B denotes indium, and X signifies tellurium, have garnered growing interest for optoelectronic applications owing to their advantageous optical band gaps and carrier transport characteristics. Among these materials, AgInTe <ns3:sub>2</ns3:sub> has proven to be a promising absorber for high-efficiency thin-film photovoltaic applications. Layer thickness optimization is a critical factor that impacts device efficiency. Methods Numerical simulations were conducted utilizing the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) to assess the influence of layer thickness on the efficacy of an AgInTe <ns3:sub>2</ns3:sub> -based solar cell. The device architecture comprised an aluminum antimonide window layer, an AgInTe <ns3:sub>2</ns3:sub> absorber layer, and a barium silicide rear layer. The thicknesses of the window, absorber, and rear layers were methodically varied. Key photovoltaic parameters, such as open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency, were derived from the simulations. Results The simulation results indicate that the efficacy of the device is highly contingent upon the thickness of each individual layer. An optimized configuration with window, absorber, and back layer thicknesses of 0.1 micrometers, 0.6 micrometers, and 0.2 micrometers, respectively, resulted in a maximal power conversion efficiency of 32.6%. This enhancement is ascribed to improved carrier generation and collection, coupled with diminished recombination losses within the device. Conclusions The study illustrates that meticulous optimization of layer thickness substantially improves the efficiency of AgInTe <ns3:sub>2</ns3:sub> -based solar cells. The proposed device architecture offers valuable design principles for the development of high-efficiency thin-film photovoltaic devices. </ns3:p>