ASSESSEMENT OF THE EFFECT OF TEMPERATURE ON DRIFT AND DIFFUSION CURRENT ON PN-JUNCTION SILICON DIODE UNDER FORWARD BIAS CONDITION

Assessment on how temperature effects diffusion and drift current of p-n junction under forward bias condition was carried out here using silicon diode as the base of study with consideration of the Einstein diffusion relation for both holes and electrons as the constituent of carriers in p-n junction. The temperature of the diode was set at various values starting with room temperature and ensuring that it is maintained during each set of experiment for every forward bias voltage when the drift current and diffusion current is being obtained. This was carried out for all the set temperature as set out in work and the trends were presented on tables and graphs as showcased here where it is seen that the drift and diffusion current for various temperatures behave uniquely in relation to given forward bias voltage and current.