Off-stoichiometry-driven electronic structure modulation leads to high thermoelectric performance in n-type InSb: an experimental study with theoretical insights
The off-stoichiometry in InSb via Sb-deficiency induces resonant-like defect states around the Fermi level, E F , resulting in enhanced Seebeck coefficient and thereby thermoelectric performance.
Authors
- Suresh Perumal
- Manojkumar Moorthy
- Tanmoy Ghosh
- Subhajit Sau
- Subhradeep Chatterjee
- Usharani Valaparla
- V. Kanchana
- Sinorul Haque
- Allu Amarnath
Institutions
- Centre National de la Recherche Scientifique (FR)
- Central Glass and Ceramic Research Institute (IN)
- Université Paris-Est Créteil (FR)
- Institut de Chimie et des Matériaux Paris-Est (FR)
- Indian Institute of Technology Hyderabad (IN)
- Rajiv Gandhi Institute of Petroleum Technology (IN)
- Academy of Scientific and Innovative Research (IN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2026-01-01
- DOI
- https://doi.org/10.1039/d5ta08992a
- Citations
- 1
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 16.08