Non-volatile SRAM based on emerging memory: A comprehensive review and reliability challenges

With the rapid advancement of information technology, the demand for high-reliability and energy-efficient data processing and storage systems has grown significantly. Emerging memory technologies offer promising solutions due to their high access speeds, low power consumption, nanoscale dimensions, and CMOS compatibility. Non-volatile SRAM (NVSRAM) has attracted attention for combining SRAM with emerging memory technologies, enabling nanosecond-scale data backup and recovery with energy consumption reduced to the picojoule-per-bit level. This review identifies key reliability challenges associated with NVSRAM based on emerging memory devices, with a focus on cell design and optimization strategies, system-level architectures and control schemes, and extended applications in computing-in-memory. Moreover, reliability challenges at the device, system, and extreme-environment levels are discussed. This work aims to provide a theoretical and technological foundation for future high-reliability, energy-efficient memory solutions, while highlighting open challenges and the envisioned development of dedicated simulation frameworks for NVSRAM design and evaluation. • Review NVSRAM based on different emerging memory technologies • Analyzes NVSRAM reliability across device/circuit/system levels • Presents reliability enhancement strategies for extreme conditions • Explores NVSRAM-based CIM for next-generation computing architectures